• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a hybrid structure (10) for a surface acoustic wave device comprising a useful layer (1) of piezoelectric material assembled to a support substrate (2) having a coefficient of thermal expansion less than that of the useful layer (1). ), and an intermediate layer (3) located between the useful layer (1) and the support substrate (2). The intermediate layer is a sintered composite layer (3) formed from powders of at least a first material and a second material different from the first material.
    公开号:FR3079666A1
    申请号:FR1852796
    申请日:2018-03-30
    公开日:2019-10-04
    发明作者:Frederic Allibert；Christelle Veytizou
    申请人:Soitec SA；
    IPC主号:
    专利说明:

    HYBRID STRUCTURE FOR ACOUSTIC WAVE DEVICE
    SURFACE AND MANUFACTURING METHOD THEREOF
    FIELD OF THE INVENTION
    The present invention relates to the field of surface acoustic wave devices. It relates in particular to a hybrid structure suitable for the manufacture of surface acoustic wave devices.
    TECHNOLOGICAL BACKGROUND OF THE INVENTION
    Acoustic resonator structures such as surface acoustic wave devices (“SAW” for “Surface Acoustic Wave” according to English terminology) use one or more interdigital transducers developed on a piezoelectric substrate to convert electrical signals into acoustic waves and vice versa. Such SAW devices or resonators are often used in filtering applications. SAW radio frequency (RF) technology provides excellent performance such as high insulation and low insertion loss. For this reason, it is used for RF duplexers in wireless communication applications.
    Improving the performance of SAW RF devices, in particular by obtaining a stable frequency response with respect to temperature. The dependence of the operating frequency of SAW devices on the temperature, or the thermal frequency coefficient (“TCF” for “Temperature Coefficient of Frequency”), depends on the one hand on the variations in the spacing between the interdigitated electrodes of the transducers, which are generally due to the relatively high coefficients of thermal expansion (“CTE” for “Coefficient of Thermal Expansion”) of the piezoelectric substrates used; on the other hand, the TCF depends on the thermal speed coefficient because the expansion or contraction of the piezoelectric substrate is accompanied by an increase or a decrease in the speed of the surface acoustic wave. To minimize the thermal frequency coefficient (TCF), an objective is therefore to minimize the expansion / contraction of the piezoelectric substrate, in particular in the surface area in which the acoustic waves will propagate.
    The article by K. Hashimoto, M. Kadota et al, “Recent development of temperature compensated SAW devices”, IEEE Ultrason. Symp. 2011, pages 79 to 86, 2011, gives an overview of the approaches commonly used to overcome the problem of dependence, with respect to temperature, of the frequency response of SAW devices.
    An interesting approach consists in using a hybrid substrate, for example composed of a layer of piezoelectric material placed on a silicon substrate. The low CTE of silicon makes it possible to limit the expansion / contraction of the piezoelectric layer in temperature. In the case of a piezoelectric layer of Lithium Tantalate (LiTaO3), the article cited above indicates that a ratio of 10 between the thickness of LiTaO3 and the thickness of the silicon substrate makes it possible to improve the coefficient of thermal frequency (TCF). One of the drawbacks of this approach comes from the presence of spurious acoustic waves (called “spurious acoustic modes” in the article “Characterization of bonded wafer for RF filters with reduced TCF”, BPAbbott et al, Proc 2005 IEEE International Ultrasonics Symposium, Sept 19-21, 2005, pp. 926-929) which negatively impact the frequency characteristics of the resonator produced on the hybrid substrate. These parasitic resonances are notably linked to parasitic reflections of the main acoustic wave (propagating mainly in a surface area of the layer of LiTaO3) on the underlying interfaces, including in particular the interface between LiTaO3 and silicon. One solution to reduce these parasitic resonances is to increase the thickness of the LiTaO3 layer; this supposing also to increase the thickness of the Si substrate in order to preserve the improvements in TCF, the total thickness of the hybrid substrate is no longer compatible with the needs for reducing the thickness of the final components, in particular to address the market for cell phones. Another solution, proposed by K. Hashimoto et al. (Article cited above) is to roughen the lower surface of the layer of LiTaO3 (at the bonding interface with the substrate) so as to limit the reflections of the acoustic wave thereon.
    OBJECT OF THE INVENTION
    An object of the present invention is to propose an alternative solution to the solutions of the state of the art. An object of the invention is in particular to propose a hybrid structure allowing the reduction and / or elimination of said parasitic acoustic waves.
    BRIEF DESCRIPTION OF THE INVENTION
    The present invention relates to a hybrid structure for a surface acoustic wave device comprising a useful layer of piezoelectric material assembled to a support substrate having a coefficient of thermal expansion lower than that of the useful layer, and an intermediate layer situated between the useful layer and the support substrate. The hybrid structure is remarkable in that the intermediate layer is a sintered composite layer, formed from powders of at least one first material and a second material different from the first.
    According to advantageous characteristics of the invention, taken alone or in combination:
    • the first material has an acoustic impedance similar to that of the useful layer; the ratio between the acoustic impedance of the useful layer and the acoustic impedance of the second material is greater than 2; and the average particle size of the powders of the first and second material is greater than or equal to a quarter of the wavelength of the acoustic signal intended to propagate on the surface of the surface acoustic wave device.
    • the first material and the second material are chosen so as to form an acoustic impedance matching layer between the useful layer and the support substrate; the average particle size of the powders of the first and second material is less than a quarter of the wavelength of the acoustic signal intended to propagate on the surface of the surface acoustic wave device.
    • the support substrate comprises a material chosen from silicon, glass, silica, sapphire, alumina, aluminum nitride.
    • the useful layer comprises a piezoelectric material chosen from lithium tantalate (LiTaO3), lithium niobate (LiNbO3), quartz, zinc oxide (ZnO).
    • the first and second materials are chosen from silicon oxide, silicon nitride, silicon, silicon carbide, alumina, germanium, sapphire, zirconium.
    the composite layer has a thickness of between a few hundred nanometers and several tens of microns.
    The invention also relates to a method for manufacturing a hybrid structure for a surface acoustic wave device comprising the following steps:
    i) providing a useful layer of piezoelectric material and a support substrate having a coefficient of thermal expansion lower than that of the useful layer;
    ii) depositing a layer formed of a mixture of powders of at least a first material and a second material different from the first, on a first face of the useful layer and / or on a first face of the support substrate;
    iii) Sintering the layer formed of the powder mixture to obtain a sintered composite layer integral with the first face of the useful layer and / or the first face of the support substrate;
    iv) Assembling the useful layer and the support substrate, so that the composite layer is disposed between the useful layer and the support substrate.
    According to advantageous characteristics of the invention, taken alone or in combination:
    • the first face of the useful layer and / or the first face of the support substrate comprises a protective layer, prior to the deposition of the layer formed from the mixture of powders of step ii).
    The protective layer is formed by at least one material chosen from silicon nitride, silicon oxynitride, silicon oxide and
    1'alumine.
    • the mixture of powders is in the form of a viscous paste, and the deposition of the layer formed by said mixture in step ii) is carried out by centrifugal coating.
    • the deposition of the layer formed by the mixture of powders is followed by a heat treatment at low temperature to remove at least one liquid component from the viscous paste.
    • a bonding layer is deposited on the sintered composite layer, prior to step iv) of assembly.
    • the useful layer provided in step i) is a piezoelectric material donor substrate.
    • the manufacturing process comprises a step v) of thinning the donor substrate to the desired thickness of the layer useful for the manufacture of the acoustic wave device.
    BRIEF DESCRIPTION OF THE DRAWINGS
    Other characteristics and advantages of the invention will emerge from the detailed description which follows with reference to the appended figures in which:
    Figure 1 shows a hybrid structure according to the invention;
    the table presents a list of materials suitable for forming a sintered composite layer of a hybrid structure according to the invention;
    Table 1b presents a list of materials for forming a useful layer of a hybrid structure according to the invention;
    Figures 2a and 2b show hybrid structures according to the invention;
    Figure 3 shows a hybrid structure according to the invention, comprising a SAW device;
    Figures 4a to 4e show a method of manufacturing a hybrid structure according to the invention.
    DETAILED DESCRIPTION OF THE INVENTION
    In the descriptive part, the same references in the figures may be used for elements of the same nature. The figures are schematic representations which, for the sake of readability, are not to scale. In particular, the thicknesses of the layers along the z axis are not to scale with respect to the lateral dimensions along the x and y axes.
    The invention relates to a hybrid structure 10 suitable for the manufacture of surface acoustic wave devices (SAW); it is particularly suitable for the manufacture of devices whose frequency is in the range of a few tens of MHz to a few tens of GHz.
    The hybrid structure 10 according to the invention comprises a useful layer 1 of piezoelectric material, having a first face 1a and a second face 1b, as illustrated in FIG. 1. The useful layer 1 is so named because it will be used for the preparation surface acoustic wave devices. For example, the useful layer 1 of the hybrid structure 10 could be composed of a material chosen from the group: lithium tantalate LiTaCh (LTO in Table 1b), lithium niobate LiNbCh (LNO in Table 1b) , aluminum nitride AIN (Table 1b), zinc oxide (ZnO).
    The hybrid structure 10 also includes an intermediate layer 3 placed under the useful layer 1 (along the axis z shown in FIG. 1). The intermediate layer is a sintered composite layer 3, formed from powders of at least two different materials. The term “sintered layer” means a layer resulting from the consolidation of a mixture of powders: this consolidation is obtained by the addition of thermal and possibly mechanical energy, but without the melting of at least one of the pulverulent materials of the mixture. The sintered nature of the composite layer can therefore be detected by structural analysis of said layer (for example by scanning electron microscopy). The particles or grains of the material powders appear welded together and the density of the composite layer depends on the level of compaction of the mixture during the supply of energy for consolidation.
    The particles forming the powder of each of the materials of the sintered composite layer 3 have dimensions according to a typically Gaussian distribution. In the following description, the average particle size will be assimilated to the average equivalent diameter of the particles of a given material. The average particle size can typically vary between a few tens of nanometers and a few microns.
    The sintered composite layer 3 can in particular be formed from at least a first and a second material, chosen from silicon oxide, silicon nitride, silicon, silicon carbide, alumina, germanium , sapphire, zirconium, certain properties of which are indicated in Table 1.
    The sintered composite layer 2 may possibly comprise three or more different materials.
    The sintered composite layer 3 has, according to the embodiments, a thickness of between a few hundred nanometers and several microns.
    Finally, the hybrid structure 10 comprises a support substrate 2 having a coefficient of thermal expansion lower than that of the useful layer 1, arranged under the composite layer 3 (along the axis z represented in FIG. 1), making it possible to limit the expansion / contraction of the useful layer 1 in temperature (and thus improve the thermal frequency coefficient of the devices which will be developed on said useful layer 1). The support substrate 2 may in particular be composed of a material chosen from the group: silicon, III-V semiconductors, silicon carbide, glass, sapphire.
    As illustrated in FIGS. 2a and 2b, the hybrid structure 10 preferably comprises additional layers 4 arranged on the first face 1a of the useful layer 1 and / or on the first face 2a of the support substrate 2, and potentially on the second face 2b of the support substrate 2 and on the edges of said substrate 2 (Figure 2b). As we will see during the description of the process for manufacturing the hybrid structure 10, these additional layers 4 have in particular a function of protection of the support substrate 2 and / or of the useful layer 1, against the diffusion of impurities contained in the sintered composite layer 3 or present during the preparation of said layer 3.
    The hybrid structure 10 according to the invention is suitable for the manufacture of surface acoustic wave devices (SAW), comprising in particular metal electrodes 20 on the useful layer 1, between which an acoustic signal is propagated (shown diagrammatically by the white arrow on FIG. 3), in the plane (x, y), close to the surface of the first face 1b of the useful layer 1.
    According to a first embodiment of the hybrid structure 10 of the invention, the sintered composite layer 3 is configured to maximize the diffusion of an incident acoustic wave, resulting from the acoustic signal and which would propagate in the volume of the useful layer 1 , up to composite layer 3.
    For this, in the sintered composite layer 3, formed from powders of at least a first and a second material, the first material has an acoustic impedance similar to that of the useful layer 1. By similar, is meant having a gap maximum of +/- 20% around the acoustic impedance value of the useful layer 1, and preferably a difference of less than +/- 15%, or even +/- 10%. For example, for a useful layer 1 of LiTaO3, the first material may be alumina, the acoustic impedance of which (40.6 × 10 6 Pa.s / m) is substantially the same as that of lithium tantalate ( 44.8xl0 6 Pa.s / m).
    In addition, the ratio between the acoustic impedance of the useful layer 1 and the acoustic impedance of the second material of the sintered composite layer 3 is chosen to be greater than or equal to 2, so as to guarantee a reflection coefficient of more than 10 %. For example, if the first material is lithium tantalate (44.8xl0 6 Pa.s / m), the second material could be S1O2, whose acoustic impedance is 13.2xl0 6 Pa.s / m, making it possible to obtain a reflection coefficient of the order of 30% at the interface between the particles of the composite layer 3, and producing reflections in multiple directions (diffusion).
    Finally, the particle size of the powders of the first and second material is greater than or equal to a quarter of the wavelength of the incident acoustic wave. This characteristic ensures that the incident acoustic wave can be influenced by particles. For example, for an incident acoustic wave having a wavelength around 6 microns (or a frequency of about 1 GHz), the average particle size will be chosen around 2 microns. The sintered composite layer 3 then has a thickness greater than 5 microns, or even greater than 10 microns.
    If an additional layer 4 is present between the useful layer 1 and the composite layer 3, the additional layer 4 must have an acoustic impedance close to that of the useful layer 1, in order to limit the parasitic reflections between these two layers. For a useful layer 1 of LiTaO3, one could for example use alumina whose acoustic impedance (40.6 × 10 6 Pa.s / m) is close to that of LiTaO3, which leads to a reflection of less than 0.5% .
    The sintered composite layer 3 according to the first embodiment makes it possible to diffuse the incident wave in a multitude of directions, and thus greatly limits the component reflected towards the electrodes 20 of the surface acoustic wave device.
    According to a second embodiment of the hybrid structure 10 of the invention, the sintered composite layer 3 is configured to maximize the transmission of an incident acoustic wave, resulting from the acoustic signal and which would propagate in the volume of the useful layer 1 , up to composite layer 3.
    For this, in the sintered composite layer 3, formed from powders of at least a first and a second material, the first material and the second material are chosen so as to form an acoustic impedance matching layer between the useful layer 1 and the support substrate 2. Forming an acoustic impedance matching layer implies that the average acoustic impedance of the composite layer 3 is substantially equal to the square root of the product of the acoustic impedances of the useful layer 1 and of the support substrate 2:
    Z composite layer = y] useful layer ^ · ^ substrate
    Recall that the acoustic impedance Z of a material is expressed as:
    Z = vxp where v is the speed of the acoustic wave in the material, p is the density of the material.
    In the case of the composite layer 3, we consider the volume fractions V ± and V 2 of each of the materials composing it, we can thus evaluate its acoustic impedance (in the case of two materials) from the expression:
    Z composite layer ~ (νχΧΕχ + Ι ^ Χΐ ^ ΟΧζΡίΧ ^ Ι + where p x and p 2 are respectively the density of the first and second material, and v 2 are respectively the speed of the acoustic wave in the first and second material.
    The volume fractions Vx and V 2 are defined by the proportion of each of the materials in the composite layer 3.
    For example, the first material may be AI2O3 and the second material of S1O2, present in the composite layer in proportions of 65% and 35% respectively.
    The impedance of the composite layer 3 could thus be of the order of 30 × 10 6 Pa.s / m.
    In addition, according to this second embodiment, the average particle size of the powders of the first and second material is less than a quarter of the wavelength of the incident acoustic wave. This characteristic ensures that the incident acoustic wave sees the composite layer as an almost homogeneous medium. For example, for an incident acoustic wave having a wavelength around 7.5 microns (or a frequency of about 800 MHz), the average particle size can be chosen around 0.5 microns. The sintered composite layer 3 may have a thickness of a few microns.
    If an additional layer 4 is present between the useful layer 1 and the composite layer 3, the additional layer 4 must have an acoustic impedance close to that of the useful layer 1, in order to limit the parasitic reflections between these two layers. For a useful layer 1 of LiTaO3, one could for example use alumina whose acoustic impedance (40.6 × 10 6 Pa.s / m) is close to that of LiTaO3, which leads to a reflection of less than 0.5% .
    If an additional layer 4 is present between the composite layer 3 and the support substrate 2, this additional layer 4 must have an acoustic impedance close to that of the support substrate 2, to limit parasitic reflections at the interface additional layer / support substrate. For an Si support substrate, it is possible for example to use silicon nitride whose acoustic impedance (~ 22 × 10 6 Pa.s / m) is close to that of Si, which leads to a reflection of less than 0.5%.
    The sintered composite layer 3 according to the second embodiment makes it possible to favor the transmission (by adaptation of acoustic impedance) of the useful layer 1 to the substrate 2, of the incident acoustic wave usually reflected at the interfaces of a hybrid structure : it therefore makes it possible to reduce parasitic reflections negatively impacting the frequency characteristics of the SAW device developed on the hybrid structure 10.
    According to a variant applicable to the various embodiments described of the hybrid structure 10, the sintered composite layer 3 has good dielectric properties (resistivity greater than E 7 ohms.cm) and an equivalent low permittivity (typically less than 11 F / m, permittivity of silicon), so as to provide electrical insulation equivalent to several microns of silicon oxide. Such a sintered composite layer 3 can in particular improve the linearity of the surface acoustic wave device in the radio frequency range.
    According to another variant applicable to the various embodiments described of the hybrid structure 10, the sintered composite layer 3 has properties for trapping mobile electrical charges. This characteristic makes it possible to trap and therefore to neutralize the electric charges liable to appear in the upper part of the support substrate 2 due to the presence of fixed charges in one of the upper layers (additional layer 4 or useful layer 1). To present this trapping characteristic, one of the materials making up the particles of the composite layer 3 may be silicon.
    The invention also relates to a method of manufacturing a hybrid structure 10 for a surface acoustic wave device. The method comprises a first step (denoted i)) of providing a useful layer 1 of piezoelectric material. According to an advantageous embodiment, the useful layer 1 is in the form of a donor substrate 1 ′ of piezoelectric material, of thickness and diameter standard for the microelectronics industry (FIG. 4a).
    The first step also includes the supply of a support substrate 2 having a coefficient of thermal expansion lower than that of the donor substrate 1 ′ (that is also that of the useful layer 1).
    The manufacturing method according to the invention comprises a second step (denoted ii)) comprising the deposition of a layer 3 ′ formed of a mixture of powders of at least one first material and a second material different from the first, on a first face 1a of the useful layer 1 (or of the donor substrate 1 ′) and / or on a first face 2a of the support substrate 2. In the example illustrated in FIG. 4b, the deposition of the layer 3 ′ of powder mixture is carried out on the first face 2a of the support substrate 2. The layer 3 ′ could be deposited on the first face 1a of the useful layer 1; it could also be deposited on each of the first faces 1a, 2a respectively of the useful layer 1 and of the support substrate 2.
    Advantageously, the first face 2a of the support substrate 2 comprises a protective layer 4a produced prior to the deposition of the layer 3 ′ of powder mixture. The protective layer 4a may even completely encapsulate the support substrate 2, that is to say cover its rear face 2b and its edge.
    Alternatively, if the layer 3 ′ of powder mixture is deposited on the useful layer 1 (or the donor substrate 1 ′), a protective layer will be deposited at least on the first face 1a of said useful layer 1 (or of the donor substrate 1 ').
    Preferably, the protective layer 4a is formed by at least one material chosen from silicon nitride, silicon oxynitride, silicon oxide, alumina. It can be produced by various known techniques of chemical deposition. It makes it possible to avoid or at least limit the diffusion of impurities contained in the layer 3 ′, in the support substrate 2 (or the useful layer 1)
    According to a first implementation variant, the powder mixture is in the form of a viscous paste.
    Such a paste is usually obtained by adding a liquid compound, of solvent type (in particular alcohol, for example ethanol), to the dry mixture of powders. Typically, the powders used contain particles whose average size is between a few tens of nanometers and a few microns.
    Alternatively, the powder mixture can be integrated into a matrix of polymer type based on silicon (PDG for polymer-derived ceramics), able to transform into ceramic at high temperature. Note that in the case of a 3 ′ layer with PDG matrix, the sintered composite layer 3 which will be obtained subsequently will comprise the first and the second material coming from the powder mixture, but also silicon coming from the ceramic transformation of the matrix.
    The deposition of the layer 3 ′ formed by said mixture in step ii) is preferably carried out by centrifugal coating (“spin coating” or “dip coating” according to English terminology) or screen printing through a mask.
    The viscosity of the paste is adjusted by the powder / liquid compound (solvent and / or polymer) ratio. It is chosen to allow a uniform deposition of the 3 ′ layer, at thicknesses which can range from a few hundred nanometers to several microns.
    The deposition of the 3 ′ layer is followed by a heat treatment at low temperatures (for example between 150 ° C. and 400 ° C.) making it possible to remove the solvent (s) from the 3 ′ layer and to avoid any degassing later in the process, especially after the assembly step (described below).
    According to a second implementation variant, the powder mixture is in a powdery dry form and is deposited in a layer 3 ′ on the first face 2a of the support substrate 2 (or alternatively on the face 1a of the donor substrate 1 ′) . The forming of this layer 3 ′ can be carried out by compression molding or hot isostatic compression. In both cases, a compressive stress is applied to the layer 3 ′ to make the particles of the powders of the mixture integral with each other and with the first face 2a. Specific tools are necessary to maintain the powder mixture on the substrate and apply a uniform compressive stress over the entire surface of said substrate.
    The manufacturing method according to the invention comprises a third step (denoted iii)) comprising the sintering of the layer 3 ′ formed of the powder mixture, to obtain a sintered composite layer 3 secured to the first face 2a of the support substrate 2 (FIG. 4c).
    Sintering is usually carried out at high temperatures, typically above 1000 ° C, for a period of time which can range from a few hours to about 24 hours. The sintering temperature nevertheless remains below the melting temperature of at least one of the powders contained in the layer 3 '. Under the effect of heat, the powder particles are welded together, which forms the cohesion of the resulting composite layer 3. The composite layer 3 also becomes integral with the first face 2a of the support substrate 2.
    Optionally, sintering can also be carried out under mechanical stress, which makes it possible to further compact the composite layer 3.
    The sintered composite layer 2 is thus composed of at least particles of the first and second material. Between the particles, depending on the level of compaction, there may be more or less empty interstices (or containing the ceramic from a PDG matrix). Depending on the particle size distribution, the volume fraction of these interstices may reach 50%, and more preferably be kept less than 25%, or even less than 15%, in particular to ensure good mechanical strength of the composite layer 2. For the sake of for simplification, this volume fraction of interstices has not been taken into account in the embodiments of the hybrid structure 10 described above; it could be considered as a third material, in addition to the first and second materials composing the particles.
    The thickness of the layer 3 ′ deposited in step ii) is chosen so as to obtain a desired thickness of sintered composite layer 3. In fact, depending on the type of layer deposited 3 ′ (in the form of a paste with solvent and / or polymer or in dry form), the reduction in thickness during the sintering step will be more or less significant. A reduction in volume of the 3 ′ layer of the order of 10 to 30% can take place.
    The manufacturing method according to the invention comprises a fourth step (denoted iv)) comprising the assembly of the useful layer 1 (or of the donor substrate 1 ′) and of the support substrate 2, so that the sintered composite layer 3 is disposed between the useful layer 1 and the support substrate 2 (Figure 4d).
    Preferably, a bonding layer 4b is deposited on the composite layer 3, prior to step iv) of assembly. For example, a layer of silicon oxide may be deposited on the free surface of the composite layer 3. This bonding layer 4b provides, on the one hand, an encapsulation of the sintered composite layer 3, avoiding or at least limiting the risks of contamination between the different layers of the hybrid structure 10; on the other hand, the bonding layer 4b can be advantageous to allow a conventional surface preparation and not specific to the composition of the sintered composite layer 3.
    Preferably, the assembly step is carried out by direct bonding, by molecular adhesion of the two surfaces brought into contact: that is to say of the first face 1a of the useful layer 1 (or of the donor substrate 1 ′) and of the free face of the composite layer 3 in the example of FIG. 4c. The principle of molecular adhesion, well known in the state of the art, will not be described in more detail here.
    Alternatively, the assembly can be carried out by adding a layer of adhesive material, or by any other bonding technique suitable for the intended application.
    For most assembly processes, a good surface condition (cleanliness, low roughness, etc.) of the substrates to be assembled will be required.
    The manufacturing method according to the invention may further comprise a fifth step (denoted v)) comprising the thinning of the donor substrate 1 'to the desired thickness of the useful layer 1 for the manufacture of the acoustic wave device ( Figure 4e). This step could for example include a mechanical running-in ("grinding") followed by a dry or mechanical-chemical polishing, making it possible to ensure a good surface condition for the useful layer 1. Different cleaning sequences could be applied during or after the thinning step to guarantee the quality and cleanliness of the final hybrid structure 10.
    The thinning of the donor substrate 1 ′ for obtaining the useful layer 1 can be carried out by any other known technique, in particular the Smart Cut® process or other techniques for producing thin layers.
    Of course, the invention is not limited to the modes of implementation and examples described and it is possible to make variant embodiments without departing from the scope of the invention as defined by the claims.
    权利要求:
    Claims (14)
    [1" id="c-fr-0001]
    1. Hybrid structure (10) for a surface acoustic wave device comprising a useful layer (1) of piezoelectric material assembled to a support substrate (2) having a coefficient of thermal expansion lower than that of the useful layer (1), and an intermediate layer (3) located between the useful layer (1) and the support substrate (2), the hybrid structure (10) being characterized in that the intermediate layer (3) is a sintered composite layer (3), formed at starting from powders of at least a first material and a second material different from the first.
    [2" id="c-fr-0002]
    2. Hybrid structure (10) for a surface acoustic wave device according to the preceding claim, in which:
    • the first material has an acoustic impedance similar to that of the useful layer (1), • the ratio between the acoustic impedance of the useful layer (1) and the acoustic impedance of the second material is greater than 2, • the size average of the particles of the powders of the first and second material is greater than or equal to a quarter of the wavelength of the acoustic signal intended to propagate on the surface of the surface acoustic wave device.
    [3" id="c-fr-0003]
    3. Hybrid structure (10) for a surface acoustic wave device according to claim 1, in which:
    • the first material and the second material are chosen so as to form an acoustic impedance matching layer between the useful layer (1) and the support substrate (2), • the average particle size of the powders of the first and of the second material is less than a quarter of the wavelength of the acoustic signal intended to propagate on the surface of the surface acoustic wave device.
    [4" id="c-fr-0004]
    4. Hybrid structure (10) for a surface acoustic wave device according to one of the preceding claims, in which the support substrate (2) comprises a material chosen from silicon, glass, silica, sapphire, alumina , aluminum nitride.
    [5" id="c-fr-0005]
    5. Hybrid structure (10) for a surface acoustic wave device according to one of the preceding claims, in which the useful layer (1) comprises a piezoelectric material chosen from lithium tantalate (LiTaO3), lithium niobate (LiNbO3 ), quartz, zinc oxide (ZnO).
    [6" id="c-fr-0006]
    6. Hybrid structure (10) for a surface acoustic wave device according to one of the preceding claims, in which the first and second materials are chosen from silicon oxide, silicon nitride, silicon, silicon carbide , alumina, germanium, sapphire, zirconium.
    [7" id="c-fr-0007]
    7. Method for manufacturing a hybrid structure (10) for a surface acoustic wave device characterized in that it comprises the following steps:
    i) providing a useful layer (1) of piezoelectric material and a support substrate (2) having a coefficient of thermal expansion lower than that of the useful layer (1);
    ii) The deposition of a layer (3 ′) formed of a mixture of powders of at least a first material and a second material different from the first, on a first face (la) of the useful layer (1) and / or on a first face (2a) of the support substrate (2);
    iii) Sintering of the layer (3 ′) formed of the powder mixture to obtain a sintered composite layer (3) integral with the first face (la) of the useful layer (1) and / or of the first face (2a) support substrate (2);
    iv) Assembling the useful layer (1) and the support substrate (2), so that the composite layer (3) is disposed between the useful layer (1) and the support substrate (2).
    [8" id="c-fr-0008]
    8. A method of manufacturing a hybrid structure (10) for a surface acoustic wave device according to the preceding claim, wherein the first face (la) of the useful layer (1) and / or the first face (2a) of the support substrate (2) comprises a protective layer (4, 4a), prior to the deposition of the layer (3 ') formed from the powder mixture of step ii).
    [9" id="c-fr-0009]
    9. Method for manufacturing a hybrid structure (10) for a surface acoustic wave device according to the preceding claim, in which the protective layer (4, 4a) is formed by at least one material chosen from silicon nitride , silicon oxynitride, silicon oxide and alumina.
    [10" id="c-fr-0010]
    10. Method for manufacturing a hybrid structure (10) for a surface acoustic wave device according to one of the three preceding claims, in which the powder mixture is in the form of a viscous paste, and the deposition of the layer (3 ') formed by said mixture in step ii) is produced by centrifugal coating.
    [11" id="c-fr-0011]
    11. Method for manufacturing a hybrid structure (10) for a surface acoustic wave device according to the preceding claim, in which the deposition of the layer (3 ′) formed by the mixture of powders is followed by a heat treatment at low temperature to remove at least one liquid component from the viscous paste.
    [12" id="c-fr-0012]
    12. Method for manufacturing a hybrid structure (10) for a surface acoustic wave device according to one of the five preceding claims, in which a bonding layer (4b) is deposited on the composite layer (3) beforehand in step iv) of assembly.
    [13" id="c-fr-0013]
    13. Method for manufacturing a hybrid structure (10) for a surface acoustic wave device according to one of the six preceding claims, in which the useful layer (1) supplied in step i) is a donor substrate ( 1 ') of piezoelectric material.
    [14" id="c-fr-0014]
    14. A method of manufacturing a hybrid structure (10) for a surface acoustic wave device according to the preceding claim, comprising a step v) of thinning the donor substrate (1 ') to the desired thickness of the useful layer (1) for manufacturing the acoustic wave device.
    类似技术:
    公开号 | 公开日 | 专利标题
    EP3694008B1|2021-04-28|Hybrid structure for a device with surface acoustic waves
    EP3776677B1|2022-02-16|Hybrid structure for surface acoustic wave device and associated production method
    EP2486655B1|2019-08-07|Acoustic wave device including a surface wave filter and a bulk wave filter, and method for making same
    EP2464006B1|2018-05-30|Method for manufacturing an acoustic-wave resonator including a suspended membrane
    EP3227905A1|2017-10-11|Structure for radiofrequency applications
    EP3411910B1|2021-09-01|Hybrid structure for a surface-acoustic-wave device
    EP3465784B1|2020-04-08|Hybrid structure for a surface acoustic wave device
    EP3394908B1|2021-05-12|Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device
    FR2951024A1|2011-04-08|METHOD FOR MANUFACTURING BAW RESONATOR WITH HIGH QUALITY FACTOR
    EP3596825A1|2020-01-22|Saw resonator comprising layers for attenuating parasitic waves
    WO2019186265A1|2019-10-03|Method for manufacturing a substrate for a radiofrequency filter
    FR3079662A1|2019-10-04|SUBSTRATE FOR RADIO FREQUENCY APPLICATIONS AND ASSOCIATED MANUFACTURING METHOD
    EP3365927A1|2018-08-29|Composite structure and associated production method
    EP3465788B1|2020-05-20|Method for producing a layer
    FR3108788A1|2021-10-01|A method of manufacturing a piezoelectric structure for a radiofrequency device which can be used for the transfer of a piezoelectric layer, and a method of transferring such a piezoelectric layer
    WO2017068268A1|2017-04-27|Surface acoustic wave device and associated production method
    FR3084776A1|2020-02-07|ALKALINE NIOBATE-BASED DEVICE WITH BARRIER LAYER AND MANUFACTURING METHOD
    同族专利:
    公开号 | 公开日
    JP2021517384A|2021-07-15|
    US20210057635A1|2021-02-25|
    CN111837247A|2020-10-27|
    TW201946299A|2019-12-01|
    FR3079666B1|2020-04-03|
    SG11202009517QA|2020-10-29|
    WO2019186011A1|2019-10-03|
    KR20200135521A|2020-12-02|
    EP3776677B1|2022-02-16|
    EP3776677A1|2021-02-17|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US6117341A|1994-10-01|2000-09-12|Imas Technology Ltd.|Filter, apparatus including the filter and a method of use of the apparatus|
    US20140091677A1|2011-08-08|2014-04-03|Panasonic Corporation|Piezoelectric element|
    FR3047355A1|2016-02-01|2017-08-04|Soitec Silicon On Insulator|HYBRID STRUCTURE FOR ACOUSTIC SURFACE WAVE DEVICE|
    WO2021213410A1|2020-04-21|2021-10-28|济南晶正电子科技有限公司|Composite substrate and manufacturing method therefor|
    CN112688658B|2020-12-25|2021-11-26|济南晶正电子科技有限公司|Piezoelectric substrate, preparation method and electronic component|
    法律状态:
    2019-02-19| PLFP| Fee payment|Year of fee payment: 2 |
    2019-10-04| PLSC| Publication of the preliminary search report|Effective date: 20191004 |
    2020-02-20| PLFP| Fee payment|Year of fee payment: 3 |
    2021-02-25| PLFP| Fee payment|Year of fee payment: 4 |
    2022-02-21| PLFP| Fee payment|Year of fee payment: 5 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1852796A|FR3079666B1|2018-03-30|2018-03-30|HYBRID STRUCTURE FOR SURFACE ACOUSTIC WAVE DEVICE AND MANUFACTURING METHOD THEREOF|
    FR1852796|2018-03-30|FR1852796A| FR3079666B1|2018-03-30|2018-03-30|HYBRID STRUCTURE FOR SURFACE ACOUSTIC WAVE DEVICE AND MANUFACTURING METHOD THEREOF|
    JP2020543227A| JP2021517384A|2018-03-30|2019-03-13|Hybrid constructions and related manufacturing methods for surface acoustic wave devices|
    PCT/FR2019/050540| WO2019186011A1|2018-03-30|2019-03-13|Hybrid structure for surface acoustic wave device and associated production method|
    KR1020207030979A| KR20200135521A|2018-03-30|2019-03-13|Hybrid structures for surface acoustic wave devices and related production processes|
    EP19715974.2A| EP3776677B1|2018-03-30|2019-03-13|Hybrid structure for surface acoustic wave device and associated production method|
    SG11202009517QA| SG11202009517QA|2018-03-30|2019-03-13|Hybrid structure for surface acoustic wave device and associated manufacturing process|
    CN201980018383.6A| CN111837247A|2018-03-30|2019-03-13|Hybrid structure for surface acoustic wave device and related manufacturing method|
    US17/044,132| US20210057635A1|2018-03-30|2019-03-13|Hybrid structure for surface acoustic wave device and associated production method|
    TW108108632A| TW201946299A|2018-03-30|2019-03-14|Hybrid structure for surface acoustic wave device and associated manufacturing process|
    [返回顶部]